Abstract Silicon phthalocyanine dichloride (SiPcCl2) thin films was prepared using thermal evaporation technique. The optical and structural properties of the films were examined before and after gamma irradiation process. X-ray diffraction (XRD), Fourier-transform infrared (FTIR) and Scanning electron microscope (SEM) investigated the structure of SiPcCl2. Moreover, optical properties were studied before and after irradiation. The optical band gap decreased from 2.44 eV to 2.09 eV after irradiation with 5 KGy. The dispersion parameters like the infinity e ∞ , lattice e L dielectric constants, dispersion energy Ed, the ratio of carrier concentration to the effective mass N/m*, oscillator energy Eo were evaluated. Furthermore, the relation of volume energy loss functions VELF, the surface energy loss functions SELF, the real part e 1 and imaginary part e 2 of the dielectric constant with photon energy, hυ was analyzed.

中文翻译：

---

硅酞菁二氯化物薄膜对伽马射线辐射依赖性的结构表征和光学参数

摘要 采用热蒸发技术制备了二氯化硅酞菁(SiPcCl2)薄膜。在伽马辐照过程之前和之后检查了薄膜的光学和结构特性。X 射线衍射 (XRD)、傅里叶变换红外 (FTIR) 和扫描电子显微镜 (SEM) 研究了 SiPcCl2 的结构。此外，研究了辐照前后的光学特性。在用 5 KGy 照射后，光学带隙从 2.44 eV 降低到 2.09 eV。评估了诸如无穷大 e ∞ 、晶格 e L 介电常数、色散能 Ed、载流子浓度与有效质量 N/m* 之比、振荡器能量 Eo 等色散参数。此外，体积能量损失函数 VELF、表面能损失函数 SELF 的关系，