Temperature is a characteristic often correlated with environmental and health issues. This paper presents an organic thin film transistor (OTFT) based temperature sensor having a detection range of 30–45 °C, which, therefore, encompasses the human body temperature. The OTFT sensor featured thermosensitive poly(N-isopropylacrylamide) (PNIPAM) and pentacene as the gate dielectric and semiconductor, respectively. The PNIPAM film possessed a dielectric constant of 4.2 with very low leakage current density. The OTFT exhibited high electrical performance, with a hole mobility (μ) of 0.90 ± 0.04 cm² V⁻¹ s⁻¹, a threshold voltage (V_th) of −15.4 ± 1.16 V, and an on/off ratio of 10⁴. Significant changes in the drain current and the values of V_th and μ occurred when the temperature of the device was varied within the range 30–45 °C at an interval of 0.5 °C. The operating principle for this temperature sensor was based on the structural transformation of the PNIPAM dielectric and the enhanced charge transport of the pentacene semiconductor upon varying the temperature. Flexible OTFTs fabricated on polyethylene terephthalate substrate displayed hole mobilities as high as 0.39 ± 0.01 cm² V⁻¹ s⁻¹, values of V_th of −18.6 ± 0.45, and on/off ratios of 10², and were workable for over 100 bending cycles.

温度是经常与环境和健康问题相关的特征。本文介绍了一种基于有机薄膜晶体管（OTFT）的温度传感器，其检测范围为30–45°C，因此涵盖了人体温度。OTFT传感器的特征是热敏性聚（N-异丙基丙烯酰胺）（PNIPAM）和并五苯作为栅极电介质和半导体。PNIPAM膜的介电常数为4.2，漏电流密度非常低。OTFT表现出高电性能，空穴迁移率（μ）为0.90±0.04 cm ²  V ^-1 s ^-1，阈值电压（V _th）为-15.4±1.16 V，开/关比为10 ⁴。当器件温度在0.5°C的间隔内在30–45°C范围内变化时，漏极电流以及V _th和μ的值就会发生显着变化。该温度传感器的工作原理基于PNIPAM电介质的结构转变以及并五苯半导体在温度变化时电荷传输的增强。在聚对苯二甲酸乙二醇酯基板上制造的柔性OTFT的空穴迁移率高达0.39±0.01 cm ²  V ^-1 s ^-1，V _th值为-18.6±0.45，开/关比为10 ²，并且可以进行100多个弯曲循环。