Abstract The metal oxide semiconductor capacitors containing Mn doped ZrO2 high-κ films acted as active oxide layer were fabricated on Si (100) wafer by electron beam evaporation. Structural analysis by GIXRD revealed a complete tetragonal phase stabilization in ZrO2 thin films when doped with 5 and 8 mol% Mn and annealed at 500 °C. Film thickness of 40–80 nm was confirmed by XRR and cross-sectional FESEM analysis. Composition analysis by XPS showed that the ZrO2 thin films were stoichiometric and the Mn ions have existed in +2 oxidation state. The film surfaces were obtained to be smooth and crack free when analyzed by FESEM and AFM where the RMS roughness was found to be in the range from 0.43 to 0.82 nm. All the MOS capacitors have shown good capacitance-voltage characteristics with equivalent oxide thicknesses varying from 7.2 to 9.7 nm. The highest dielectric constant of 39.2 was observed in ZrO2 layer with 8 mol% Mn and the dielectric constant was increasing with Mn concentration. Leakage current in the MOS capacitors was found reduced by an order of magnitude due to Mn stabilized tetragonal ZrO2 layer. Among the MOS capacitors the leakage current density of as low as 1.28 × 10−6 A/cm2 was recorded at −1 V with 5 mol% Mn concentration in ZrO2 layer. The complex leakage currents across the dielectric layer in the MOS capacitors were explained based on several current conduction mechanisms. Leakage current in these devices was predominantly covered by space charge limited conduction mechanism. At lower voltages (less than −5 V), Poole-Frenkel and Schottky emission were found dominant whereas Trap-assisted tunneling and Fowler-Nordheim tunneling had contributed to the leakage current conduction at voltages greater than −10 V.

中文翻译：

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硅MOS电容器ZrO2栅极介电层中Mn离子的表面分析、栅极漏电流和电学特性

摘要 通过电子束蒸发在Si(100)晶片上制备了含有Mn掺杂ZrO2高κ薄膜作为活性氧化物层的金属氧化物半导体电容器。GIXRD 的结构分析表明，当掺杂 5 和 8 mol% Mn 并在 500 °C 下退火时，ZrO2 薄膜中的四方相完全稳定。XRR 和横截面 FESEM 分析证实了 40-80 nm 的薄膜厚度。XPS 的成分分析表明，ZrO2 薄膜是化学计量的，Mn 离子以+2 氧化态存在。当通过 FESEM 和 AFM 分析发现 RMS 粗糙度在 0.43 至 0.82 nm 的范围内时，获得的薄膜表面光滑且无裂纹。所有 MOS 电容器都显示出良好的电容电压特性，等效氧化物厚度从 7.2 到 9.7 nm 不等。在含有 8 mol% Mn 的 ZrO2 层中观察到最高介电常数 39.2，介电常数随着 Mn 浓度的增加而增加。发现由于锰稳定的四方 ZrO2 层，MOS 电容器中的漏电流降低了一个数量级。在 MOS 电容器中，ZrO2 层中 Mn 浓度为 5 mol% 时，在 -1 V 下记录的漏电流密度低至 1.28 × 10-6 A/cm2。基于几种电流传导机制解释了跨 MOS 电容器介电层的复杂漏电流。这些器件中的漏电流主要由空间电荷限制传导机制覆盖。在较低电压（小于 -5 V）下，