The thermal stability and fatigue resistance of piezoelectric ceramics are of great importance for industrialized application. In this study, the electrical properties of (0.99-x)(K_0.48Na_0.52)(Nb_0.975Sb_0.025)O₃-0.01CaZrO_3-x(Bi_0.5Na_0.5)HfO₃ ceramics are investigated. When x = 0.03, the ceramics exhibit the optimal electrical properties at room temperature and high Curie temperature (T_C = 253 °C). In addition, the ceramic has outstanding thermal stability (\(d_{33}^*\) ≈ 301 pm/V at 160 °C) and fatigue resistance (variation of P_r and \(d_{33}^*\) ~10% after 10⁴ electrical cycles). Subsequently, the defect configuration and crystal structure of the ceramics are studied by X-ray diffraction, temperature-dielectric property curves and impedance analysis. On one hand, the doping (Bi_0.5Na_0.5)HfO₃ makes the dielectric constant peaks flatten. On the other hand, the defect concentration and migration are obviously depressed in the doped ceramics. Both of them can enhance the piezoelectrical properties and improve the temperature and cycling reliabilities. The present study reveals that the good piezoelectric properties can be obtained in 0.96(K_0.48Na_0.52)(Nb_0.975Sb_0.025)O₃-0.01CaZrO₃-0.03(Bi_0.5Na_0.5) HfO₃ ceramics.

中文翻译：

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（K，Na）（Nb，Sb）O 3 -CaZrO 3-（Bi，Na）HfO 3陶瓷的热和循环可靠性提高

压电陶瓷的热稳定性和抗疲劳性对于工业化应用非常重要。在这项研究中，研究了（0.99- x）（K _0.48 Na _0.52）（Nb _0.975 Sb _0.025）O ₃ -0.01CaZrO _{3- x}（Bi _0.5 Na _0.5）HfO ₃陶瓷的电性能。当x = 0.03时，陶瓷在室温和高居里温度（T _C = 253°C）下表现出最佳的电性能。此外，陶瓷具有出色的热稳定性（\（d_ {33} ^ * \）在160°C时≈301 pm / V）和抗疲劳性（在10 ^4个电循环后，P _r和\（d_ {33} ^ * \）的变化约为10％）。随后，通过X射线衍射，温度-介电特性曲线和阻抗分析研究了陶瓷的缺陷形态和晶体结构。一方面，掺杂（Bi _0.5 Na _0.5）HfO ₃使介电常数峰值变平。另一方面，掺杂陶瓷中的缺陷浓度和迁移明显降低了。它们都可以增强压电性能，并改善温度和循环可靠性。本研究表明，在0.96（K _0.48 Na _0.52）（Nb _0.975 Sb _0.025）O ₃ -0.01CaZrO ₃ -0.03（Bi _0.5 Na _0.5）HfO ₃陶瓷中可以获得良好的压电性能。