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NV Center Charge State Controlled Graphene-on-Diamond Field Effect Transistor Actions With Multi-Wavelength Optical Inputs
IEEE Open Journal of Nanotechnology ( IF 1.8 ) Pub Date : 2020-05-07 , DOI: 10.1109/ojnano.2020.2993007
Yonhua Tzeng , Ying-Ren Chen , Pin-Yi Li , Chun-Cheng Chang , Yueh-Chieh Chu

We demonstrate graphene-on-diamond field effect transistor (FET) actions modulated by optically excited charge state of nitrogen-vacancy (NV) centers in diamond. Palladium (Pd) metal contacts on graphene serve as the source and the drain. Negative charge state NV - center in diamond serves as the gate with diamond being the gate dielectric and produces an electric field to enhance the hole concentration in the graphene channel. The conductivity of graphene varies with negative charge state NV - center, resulting in differential conductance. The negative gate bias is removed when a NV - center is converted to an NV o center. P-type graphene channel exhibits positive differential conductance under illumination by a blue (405 nm) laser beam while on the contrary negative differential conductance by a red (633 nm) laser beam. Furthermore, by simultaneous illumination of both blue and red laser beams, effects on differential conductance decrease according to the relative intensity of the two laser beams. Graphene FETs with wavelength dependent multiple optical inputs and one electrical output in response to the charge state of NV centers in diamond has been reported.

中文翻译:

具有多波长光输入的NV中心电荷状态控制的石墨烯-金刚石场效应晶体管动作

我们演示了由金刚石中氮空位(NV)中心的光激发电荷态调制的石墨烯-金刚石场效应晶体管(FET)行为。石墨烯上的钯(Pd)金属触点用作源极和漏极。负电荷状态的NV -中心的金刚石中作为与金刚石作为栅极电介质的栅极和产生电场,以增强在所述石墨烯沟道中的空穴浓度。石墨烯的导电性带负电荷的状态NV变化 -中心,导致微分电导。当NV负栅极偏压被去除 -中心被转换为NV ö中央。P型石墨烯通道在蓝色(405 nm)激光束照射下显示正差分电导,相反,红色(633 nm)激光束则显示负差分电导。此外,通过同时照射蓝色和红色激光束,根据两个激光束的相对强度,对差分电导的影响减小。已经报道了响应于金刚石中NV中心的电荷状态而具有与波长相关的多个光输入和一个电输出的石墨烯FET。
更新日期:2020-05-07
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