Nanostructured semiconductor, copper sulphide, CuS prepared by a mechanochemical synthesis in a large-scale operation industrial mill was modified by surfactant-assisted milling in a planetary mill. Surface modified CuS with cetrimonium bromide, and sodium dodecyl sulphate surfactants were characterised by particle size distribution and compared to mechanochemically synthesised CuS. X-ray diffraction, Fourier-transform infrared spectroscopy and elemental analysis confirmed the binding of surfactants to the CuS structure. Transmission electron microscopy has revealed that the particles composed of nanocrystallites are embedded in the surfactant matrix. Their optical properties were studied using ultraviolet–visible and photoluminescence spectroscopies. The optical band gap energies were determined to be 1.70 and 1.63 eV for CuS modified with cetrimonium bromide and sodium dodecyl sulphate.

中文翻译：

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表面改性机械化学合成硫化铜半导体的简单制备及性能

纳米结构半导体、硫化铜、CuS 通过机械化学合成在大型操作工业磨机中制备，在行星磨机中通过表面活性剂辅助研磨改性。用西曲溴铵和十二烷基硫酸钠表面活性剂改性的 CuS 通过粒度分布进行表征，并与机械化学合成的 CuS 进行比较。X 射线衍射、傅里叶变换红外光谱和元素分析证实了表面活性剂与 CuS 结构的结合。透射电子显微镜显示由纳米微晶组成的颗粒嵌入表面活性剂基质中。使用紫外-可见光和光致发光光谱研究了它们的光学特性。光学带隙能量被确定为 1.70 和 1。