Gadolinium oxysulfate doped with terbium (Gd₂O₂SO₄:Tb³⁺; 0.1, 1.0, and 10.0 mol%) materials were obtained using thermal decomposition from sulfate hydrate under a dynamic air atmosphere and between 1320–1400 K. The materials were characterized using Fourier transform infrared spectroscopy, thermogravimetric/derivative thermogravimetric investigations and X‐ray powder diffraction patterns. The Tb₂O₂SO₄ compound was obtained at 1300 K and was used to compare thermal stability and photoluminescence behaviour with that of Gd₂O₂SO₄:Tb³⁺ (0.1, 1.0, and 10.0 mol%). Magnetic susceptibility measurements indicated the presence of 15% Tb⁴⁺ phases within Tb₂O₂SO₄. The materials were excited at 377 nm and displayed green narrow lines with the strongest emission peak at 545.5 nm due to the ⁵D₄→⁷F₅ transition of Tb³⁺ ions. Brightness of terbium‐activated gadolinium oxysulfate phosphors was enhanced with increase in the concentration of Tb³⁺. Detailed analysis of spectroscopic properties of materials under investigations revealed efficient Gd₂O₂SO₄ to Tb³⁺ and Tb³⁺ to Tb³⁺ energy transfers. Increase in dopant concentration led to the enhancement of ⁵D₄→⁷F_J emission intensity and reduction of ⁵D₃→⁷F_J emission intensity via cross‐relaxation mechanisms. Distribution of particle size was increased by controlling dopant concentration in the host lattice. Obtained results confirmed that these materials could be applied potentially in field emission display devices and light‐emitting diodes.

中文翻译：

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Tb3 +离子浓度对Gd2 O2 SO4：Tb3 +荧光粉的形貌，结构和光致发光的影响。

在动态空气气氛下和1320–1400 K之间，通过硫酸盐水合物的热分解，获得了掺有（（Gd ₂ O ₂ SO ₄：Tb ³⁺ ; 0.1、1.0和10.0 mol％）的氧硫酸材料。使用傅里叶变换红外光谱，热重/导数热重研究和X射线粉末衍射图谱进行表征。Tb ₂ O ₂ SO ₄化合物在1300 K下获得，用于与Gd ₂ O ₂ SO ₄：Tb ³⁺进行热稳定性和光致发光性能比较。（0.1、1.0和10.0mol％）。磁化率测量表明在Tb ₂ O ₂ SO _4中存在15％Tb ⁴⁺相。由于Tb ³⁺离子的⁵ D ₄ → ⁷ F ₅跃迁，材料在377 nm处激发并显示绿色窄线，在545.5 nm处具有最强的发射峰。随着Tb ³⁺浓度的增加，ter活化的氧硫酸g磷光体的亮度增加。对所研究材料的光谱性质进行的详细分析显示，有效的Gd ₂ O ₂ SO ₄到Tb ³⁺和Tb ³⁺到Tb ^3+的能量转移。掺杂剂浓度的增加通过交叉弛豫机制导致⁵ D ₄ → ⁷ F _J发射强度的增加和⁵ D ₃ → ⁷ F _J发射强度的减小。通过控制主体晶格中的掺杂剂浓度来增加粒度分布。所得结果证实，这些材料可以潜在地应用于场发射显示设备和发光二极管。