We have measured electronic sputtering yields of SiC and KBr by high-energy ions (198 MeV Xe, 99 MeV Xe, 89 MeV Ni, 60 MeV Ar and 55 MeV Cl ions with the equilibrium charge). Employing the carbon-foil collector method, sputtered atoms in the C-foil are analyzed by Rutherford backscattering spectrometry (RBS) and the sputtering yields have been evaluated. It appears that the sputtering yields Y follow the power-law of the electronic stopping power (S_e): Y=(1.86S_e)^1.53 and Y=(0.77S_e)^3.0 for SiC and KBr, respectively (S_e in keV/nm). The representative sputtering yield at S_e = 10 keV/nm is evaluated to be 87.6 and 457 for SiC (bandgap E_g = 2.86 eV) and KBr (E_g = 7.4 eV) and it is revealed that these can be explained within the bandgap scheme. Lattice disordering by ion impact has been also measured by X-ray diffraction (XRD) and S_e dependence of the XRD intensity degradation is compared with that of electronic sputtering.

我们已经通过高能离子（带有平衡电荷的198 MeV Xe，99 MeV Xe，89 MeV Ni，60 MeV Ar和55 MeV Cl离子）测量了SiC和KBr的电子溅射产率。采用碳箔收集器方法，通过卢瑟福反向散射光谱法（RBS）分析了C箔中的溅射原子，并评估了溅射产率。看来，溅射产生y遵循电子的阻止能（S的幂律_ë）：Y =（1.86S _ë）^1.53和Y =（0.77S _ë）^3.0用于SiC和溴化钾，分别（S _ê以keV / nm）。 对于SiC（带隙E _g，S _e = 10 keV / nm时，代表性溅射产率经评估为87.6和457 = 2.86 eV）和KBr（E _g  = 7.4 eV），这表明可以在带隙方案中进行解释。还已经通过X射线衍射（XRD）测量了离子碰撞引起的晶格无序，并将XRD强度下降的S _e依赖性与电子溅射进行了比较。