Abstract Herein, ambient effects on electrical characteristics of p-type MoTe2 FETs under DC and pulse mode measurements were systematically investigated. As a result of reduced hole concentration in a high vacuum condition, threshold voltage increased as compared to air condition. Moreover, reduction of charge trapping and scattering in vacuum condition leads to electrical performance improvement such as contact resistance, mobility, and interface trap density. Pulsed I-V measurement and CYTOP passivation was additionally introduced to investigate into intrinsic ambient effects by excluding external issues near interface and top channel region. Lastly, temperature dependent mobility variation was examined to validate scattering mechanism in the channel of MoTe2 FETs.

中文翻译：

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直流和脉冲模式下空气气氛对 p 型 MoTe2 FET 电特性的影响

摘要 本文系统地研究了环境对直流和脉冲模式测量下 p 型 MoTe2 FET 电特性的影响。由于在高真空条件下空穴浓度降低，与空气条件相比，阈值电压增加。此外，真空条件下电荷俘获和散射的减少导致电气性能改善，例如接触电阻、迁移率和界面陷阱密度。此外，还引入了脉冲 IV 测量和 CYTOP 钝化，通过排除界面和顶部沟道区域附近的外部问题来研究内在环境影响。最后，检查了温度依赖的迁移率变化以验证 MoTe2 FET 通道中的散射机制。