Abstract Ohmic back contact is one of the keys to fabricate high efficient CdTe solar cells, as it can improve fill factor FF and open-circuit voltage Voc. In this work, antimony-containing reduced graphene oxide (RGO) was prepared and used as a back contact for CdTe thin film solar cells, in which antimony is an effective dopant for CdTe and RGO acts as a hole transport layer and diffusion barrier of antimony in the solar cells. Post deposition annealing was performed to activate the back contact layer and passivate the interface defect states. Electrical performance and apparent quantum efficiency characterization were performed to investigate device performance of CdTe solar cells with antimony-containing RGO back contacts. The results indicate that, the introduction of extrinsic doping near the CdTe back surface serves to reduce the back contact depletion width and enhance the built-in potential to enable the tunnelling of majority carrier holes through the barrier, and the RGO is beneficial for the formation of Ohmic back contact on CdTe.

中文翻译：

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还原氧化石墨烯和 Sb 双层接触 CdTe 太阳能电池的欧姆接触形成和活化

摘要 欧姆背接触是制造高效CdTe太阳能电池的关键之一，因为它可以提高填充因子FF和开路电压Voc。在这项工作中，制备了含锑的还原氧化石墨烯 (RGO) 并将其用作 CdTe 薄膜太阳能电池的背接触，其中锑是 CdTe 的有效掺杂剂，RGO 充当了锑的空穴传输层和扩散阻挡层在太阳能电池中。执行沉积后退火以激活背接触层并钝化界面缺陷状态。进行电气性能和表观量子效率表征以研究具有含锑 RGO 背接触的 CdTe 太阳能电池的器件性能。结果表明，