Abstract In this work, CdTe(0 0 1) and CdTe(1 1 1) single-crystal films were successfully grown on GaAs(0 0 1) substrates by molecular beam epitaxy. By changing the nucleation temperature, CdTe(0 0 1) and (1 1 1) films could be controllably grown on the GaAs(0 0 1) substrates. The CdTe(0 0 1) and (1 1 1) films were grown via low-temperature nucleation followed by high-temperature growth. To optimize the quality of CdTe(0 0 1) films, a CdTe/ZnTe superlattice was used to reduce the lattice mismatch, and the CdTe(0 0 1) film was grown under a cadmium-rich atmosphere. The average surface roughness of the CdTe(1 1 1) and CdTe(0 0 1) films produced was approximately 0.76 nm and 1.37 nm, respectively. The epitaxial relationship between the CdTe(1 1 1) film and the GaAs(0 0 1) substrate was studied based on X-ray diffraction pole figures. The crystal quality of the CdTe(1 1 1) film was also characterized by X-ray diffraction and etch pit density. Finally, photoluminescence spectroscopy was used to investigate the crystal quality of CdTe(0 0 1) and (1 1 1). When the CdTe(0 0 1) film was grown under a cadmium atmosphere and using ZnTe as a buffer layer, the X-ray diffraction peak around 1.56 eV disappeared; this can be related to cadmium vacancies.

中文翻译：

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通过分子束外延在 GaAs(0 0 1) 衬底上生长的 CdTe(0 0 1) 和 (1 1 1) 薄膜的微观结构和光学性能表征

摘要 本工作通过分子束外延在GaAs(0 0 1)衬底上成功生长了CdTe(0 0 1)和CdTe(1 1 1)单晶薄膜。通过改变成核温度，可以在 GaAs(0 0 1) 衬底上可控地生长 CdTe(0 0 1) 和 (1 1 1) 薄膜。CdTe(0 0 1) 和(1 1 1) 薄膜通过低温成核生长，然后高温生长。为了优化 CdTe(0 0 1) 薄膜的质量，使用 CdTe/ZnTe 超晶格来减少晶格失配，并在富镉气氛下生长 CdTe(0 0 1) 薄膜。所生产的 CdTe(1 1 1) 和 CdTe(0 0 1) 薄膜的平均表面粗糙度分别约为 0.76 nm 和 1.37 nm。基于X射线衍射极图研究了CdTe(1 1 1)薄膜与GaAs(0 0 1)衬底之间的外延关系。CdTe(1 1 1) 薄膜的晶体质量也通过 X 射线衍射和蚀刻坑密度来表征。最后，利用光致发光光谱研究了CdTe(0 0 1)和(1 1 1)的晶体质量。当CdTe(0 0 1)薄膜在镉气氛下生长并使用ZnTe作为缓冲层时，1.56 eV附近的X射线衍射峰消失；这可能与镉空缺有关。