Abstract

AlN/c-sapphire templates grown by plasma-activated molecular beam epitaxy have been studied using multicrystal X-ray diffractometry and a multi-beam optical stress meter system. Studies of the seed and buffer layers grown at different ratios of Al and N* growth flows and substrate temperatures have shown that templates with small tensile elastic stresses (<0.5 GPa) and densities of screw and edge grown-in dislocations 4 × 10⁸ and 8 × 10⁹ cm⁻², respectively, can be produced.

中文翻译：

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等离子体激活分子束外延生长的AlN / c-蓝宝石模板中的成位错的密度降低

摘要

通过使用多晶X射线衍射仪和多光束光学应力仪系统研究了通过等离子活化分子束外延生长的AlN / c蓝宝石模板。对以不同比例的Al和N *生长流量和衬底温度生长的种子层和缓冲层的研究表明，模板的拉伸弹性应力（<0.5 GPa）小，并且螺钉和边缘的位错密度为4×10 ⁸和可以分别产生8×10 ⁹ cm ^-2。