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Thermal Migration of Melted Zones over the Silicon Surface under Thermal Shock
Technical Physics Letters ( IF 0.8 ) Pub Date : 2020-06-05 , DOI: 10.1134/s1063785020040276 A. A. Skvortsov , M. V. Koryachko , M. R. Rybakova
中文翻译:
热冲击下硅表面上熔融区的热迁移
更新日期:2020-06-05
Technical Physics Letters ( IF 0.8 ) Pub Date : 2020-06-05 , DOI: 10.1134/s1063785020040276 A. A. Skvortsov , M. V. Koryachko , M. R. Rybakova
Abstract
In this paper, we examine the issues of the formation and propagation of melted zones during electric explosion of thin aluminum films on the oxidized silicon surface. A difference in the formation and propagation mechanisms of melted zones on the surface during the passage of a current pulse and after it was switched off is found. After the current pulse is switched off, the migration of melted zones is revealed to be determined by the temperature gradient near a local heat source. The temperature gradients are obtained from the dimensional dependence of the displacement rate, and the thermoelasticity coefficient that determines the dynamics of zone migration in the temperature gradient field is estimated.中文翻译:
热冲击下硅表面上熔融区的热迁移