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Thermal Migration of Melted Zones over the Silicon Surface under Thermal Shock
Technical Physics Letters ( IF 0.8 ) Pub Date : 2020-06-05 , DOI: 10.1134/s1063785020040276
A. A. Skvortsov , M. V. Koryachko , M. R. Rybakova

Abstract

In this paper, we examine the issues of the formation and propagation of melted zones during electric explosion of thin aluminum films on the oxidized silicon surface. A difference in the formation and propagation mechanisms of melted zones on the surface during the passage of a current pulse and after it was switched off is found. After the current pulse is switched off, the migration of melted zones is revealed to be determined by the temperature gradient near a local heat source. The temperature gradients are obtained from the dimensional dependence of the displacement rate, and the thermoelasticity coefficient that determines the dynamics of zone migration in the temperature gradient field is estimated.


中文翻译:

热冲击下硅表面上熔融区的热迁移

摘要

在本文中,我们研究了在氧化硅表面上的铝薄膜电爆炸过程中熔化区的形成和传播问题。发现在电流脉冲通过期间和关闭之后,表面上融化区域的形成和传播机制有所不同。关闭电流脉冲后,发现熔化区域的迁移是由局部热源附近的温度梯度决定的。根据位移速率的尺寸依赖性获得温度梯度,并估算确定温度梯度场中区域迁移动力学的热弹性系数。
更新日期:2020-06-05
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