In this paper, we have studied the thermal stability of GNR and Cu interconnects for terahertz frequency range. The top-contact (TC) and side-contact (SC) GNR interconnects are analyzed for stability, RC-delay, and power consumption at different interconnect lengths (\(10\,{\upmu }\hbox {m}\), \(50\,{\upmu }\hbox {m}\) and \(100\,{\upmu }\hbox {m}\)) and different chip operating temperatures (233 K, 300 K and 378 K). The RC-delay and power consumption are analyzed with the help of transmission line model (TLM) using 16nm PTM-HP standard CMOS model. In our analysis, we have shown that the RC-time constant for SC-GNR is \(\sim (3{-}7)\times \) and \(\sim (2{-}6)\times \) less than that of TC-GNR and Cu interconnects. Similarly, we have shown that the power consumption for SC-GNR is \(\sim (4{-}7)\times \) and \(\sim (2{-}5)\times \) less than that of TC-GNR and Cu. In terms of stability, SC-GNR interconnect is more stable at higher frequency range (\(>10^{12}\) Hz) compared with TC-GNR and Cu for \(10\,{\upmu }\hbox {m}\) interconnect length and three different chip operating temperatures.

中文翻译：

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石墨烯纳米带互连的热稳定性分析及太赫兹频率的适用性

在本文中，我们研究了GNR和Cu互连在太赫兹频率范围内的热稳定性。顶接触（TC）和侧接触（SC）GNR互连分析稳定性，在不同的互连长度（RC延迟和功耗\（10 \ {\ upmu} \ hbox中{M} \） ，\（50 \，{\ upmu} \ hbox {m} \）和\（100 \，{\ upmu} \ hbox {m} \））和不同的芯片工作温度（233 K，300 K和378 K）。借助使用16nm PTM-HP标准CMOS模型的传输线模型（TLM），可以分析RC延迟和功耗。在我们的分析中，我们显示了SC-GNR的RC时间常数为\（\ sim（3 {-} 7）\ times \）和\（\ sim（2 {-} 6）\ times \）小于TC-GNR和Cu互连。同样，我们已经证明，SC-GNR的功耗比TC的\（\ sim（4 {-} 7）\ times \）和\（\ sim（2 {-} 5）\ times \）小-GNR和铜。就稳定性而言， 与TC-GNR和Cu相比，SC-GNR互连在更高频率范围（\（> 10 ^ {12} \） Hz）下更稳定（\（10 \，{\ upmu} \ hbox {m } \）互连长度和三种不同的芯片工作温度。