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Thermal Stability Analysis of Graphene Nano-ribbon Interconnect and Applicability for Terahertz Frequency
National Academy Science Letters ( IF 1.2 ) Pub Date : 2019-12-17 , DOI: 10.1007/s40009-019-00854-6
Subhajit Das , Sandip Bhattacharya , Debaprasad Das , Hafizur Rahaman

In this paper, we have studied the thermal stability of GNR and Cu interconnects for terahertz frequency range. The top-contact (TC) and side-contact (SC) GNR interconnects are analyzed for stability, RC-delay, and power consumption at different interconnect lengths (\(10\,{\upmu }\hbox {m}\), \(50\,{\upmu }\hbox {m}\) and \(100\,{\upmu }\hbox {m}\)) and different chip operating temperatures (233 K, 300 K and 378 K). The RC-delay and power consumption are analyzed with the help of transmission line model (TLM) using 16nm PTM-HP standard CMOS model. In our analysis, we have shown that the RC-time constant for SC-GNR is \(\sim (3{-}7)\times \) and \(\sim (2{-}6)\times \) less than that of TC-GNR and Cu interconnects. Similarly, we have shown that the power consumption for SC-GNR is \(\sim (4{-}7)\times \) and \(\sim (2{-}5)\times \) less than that of TC-GNR and Cu. In terms of stability, SC-GNR interconnect is more stable at higher frequency range (\(>10^{12}\) Hz) compared with TC-GNR and Cu for \(10\,{\upmu }\hbox {m}\) interconnect length and three different chip operating temperatures.

中文翻译:

石墨烯纳米带互连的热稳定性分析及太赫兹频率的适用性

在本文中,我们研究了GNR和Cu互连在太赫兹频率范围内的热稳定性。顶接触(TC)和侧接触(SC)GNR互连分析稳定性,在不同的互连长度(RC延迟和功耗\(10 \ {\ upmu} \ hbox中{M} \) \(50 \,{\ upmu} \ hbox {m} \)\(100 \,{\ upmu} \ hbox {m} \))和不同的芯片工作温度(233 K,300 K和378 K)。借助使用16nm PTM-HP标准CMOS模型的传输线模型(TLM),可以分析RC延迟和功耗。在我们的分析中,我们显示了SC-GNR的RC时间常数为\(\ sim(3 {-} 7)\ times \)\(\ sim(2 {-} 6)\ times \)小于TC-GNR和Cu互连。同样,我们已经证明,SC-GNR的功耗比TC的\(\ sim(4 {-} 7)\ times \)\(\ sim(2 {-} 5)\ times \)小-GNR和铜。就稳定性而言, 与TC-GNR和Cu相比,SC-GNR互连在更高频率范围(\(> 10 ^ {12} \) Hz)下更稳定(\(10 \,{\ upmu} \ hbox {m } \)互连长度和三种不同的芯片工作温度。
更新日期:2019-12-17
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