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Finite-Temperature TD-DMRG for the Carrier Mobility of Organic Semiconductors.
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-06-03 , DOI: 10.1021/acs.jpclett.0c01072
Weitang Li 1 , Jiajun Ren 1 , Zhigang Shuai 1
Affiliation  

A large number of nonadiabatic dynamical studies have been applied to reveal the nature of carrier transport in organic semiconductors with different approximations. We present here a “nearly exact” graphical-process-unit-based finite-temperature time-dependent density matrix renormalization group (TD-DMRG) method to evaluate the carrier mobility in organic semiconductors, as described by the electron–phonon model, in particular, in rubrene crystal, one of the prototypical organic semiconductors, with parameters derived from first-principles. We find that (i) TD-DMRG is a general and robust method that can bridge the gap between hopping and band pictures, covering a wide range of electronic coupling strengths and (ii) with realistic parameters, TD-DMRG is able to account for the experimentally observed “band-like” transport behavior (∂μ/∂T < 0) in rubrene. We further study the long-standing puzzle of the isotope effect for charge transport and unambiguously demonstrate that the negative isotope effect (∂μ/∂m < 0 where m is the atomic mass) should be universal.

中文翻译:

用于有机半导体载流子的有限温度TD-DMRG。

大量的非绝热动力学研究已经应用于揭示有机半导体中具有不同近似值的载流子传输的性质。我们在这里提出一种“近乎精确的”基于图形处理单元的有限温度随时间变化的密度矩阵重整化组(TD-DMRG)方法,以评估有机半导体中的载流子迁移率,如电子-声子模型所述。特别是在红宝石晶体中,原型有机半导体之一,其参数来源于第一性原理。我们发现(i)TD-DMRG是一种通用且鲁棒的方法,可以弥合跳频图像和带状图像之间的间隙,涵盖了广泛的电子耦合强度,并且(ii)具有实际参数,TD-DMRG能够解决实验观察到的“带状”传输行为(rubμ / ∂T <0),以红荧烯计。我们进一步研究了同位素对于电荷传输的长期困扰,并明确证明了负同位素效应((μ / ∂m <0,其中m是原子质量)应该是普遍的。
更新日期:2020-07-02
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