Perovskite Flash Memory with a Single-Layer Nanofloating Gate.,Nano Letters

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Perovskite Flash Memory with a Single-Layer Nanofloating Gate.
Nano Letters ( IF 9.6 ) Pub Date : 2020-06-03 , DOI: 10.1021/acs.nanolett.0c01270
Maria Vasilopoulou ₁ , Byung Soon Kim ₂ , Hyeong Pil Kim ₃ , Wilson Jose da Silva ₄ , Fabio Kurt Schneider ₄ , Mohd Asri Mat Teridi ₅ , Peng Gao ₆ , Abd Rashid Bin Mohd Yusoff ₇ , Mohammad Khaja Nazeeruddin ₈

Affiliation

Here we use triple-cation metal–organic halide perovskite single crystals for the transistor channel of a flash memory device. Moreover, we design and demonstrate a 10 nm thick single-layer nanofloating gate. It consists of a ternary blend of two organic semiconductors, a p-type polyfluorene and an n-type fullerene that form a donor:acceptor interpenetrating network that serves as the charge storage unit, and of an insulating polystyrene that acts as the tunneling dielectric. Under such a framework, we realize the first non-volatile flash memory transistor based on a perovskite channel. This simplified, solution-processed perovskite flash memory displays unique performance metrics such as a large memory window of 30 V, an on/off ratio of 9 × 10⁷, short write/erase times of 50 ms, and a satisfactory retention time exceeding 10⁶ s. The realization of the first flash memory transistor using a single-crystal perovskite channel could be a valuable direction for perovskite electronics research.

中文翻译：

具有单层纳米浮栅的钙钛矿闪存。

在这里，我们将三阳离子金属-有机卤化物钙钛矿单晶用于闪存设备的晶体管通道。此外，我们设计并演示了10纳米厚的单层纳米浮栅。它由两种有机半导体的三元混合物组成，它们是形成供体：受体互穿网络（用作电荷存储单元）的p型聚芴和n型富勒烯，以及用作隧道电介质的绝缘聚苯乙烯。在这样的框架下，我们实现了第一个基于钙钛矿通道的非易失性闪存晶体管。这种经过简化，经过溶液处理的钙钛矿型闪存具有独特的性能指标，例如30 V的大存储窗口，9×10 ⁷的开/关比，短的写入/擦除时间为50毫秒，令人满意的保留时间超过10 ⁶ s。使用单晶钙钛矿通道实现第一个闪存晶体管可能是钙钛矿电子学研究的重要方向。

更新日期：2020-07-08

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