Fabrication and characteristics of high‐VOC single‐crystalline Cu2ZnSnSe4 solar cells,Progress in Photovoltaics

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Fabrication and characteristics of high‐VOC single‐crystalline Cu2ZnSnSe4 solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-06-04 , DOI: 10.1002/pip.3273
Michael A. Lloyd _{1,

2} , Brian E. McCandless ₂ , Robert Birkmire _{1,

2}

Affiliation

Cu₂ZnSnSe₄ single‐crystal solar cells with open‐circuit voltages reaching 450 mV are demonstrated. The key differences in performance between high‐ and low‐voltage cells are analyzed and compared with state‐of‐the‐art thin film devices. Copper‐poor absorbers of two different compositions were evaluated as a function of surface treatment. Temperature‐dependent JV measurements were used to assess the efficacy of interface passivation. Crystals with lower copper content are shown to require more aggressive chemical treatments to achieve the maximal benefits than does their higher‐Cu counterparts. Hole concentration is confirmed via Hall characterization, with smaller densities corresponding to lower Cu concentration. In conjunction with poor lifetimes, these carrier densities are shown to limit collection at long wavelength, which reduces current in single‐crystal devices. The decrease in Cu concentration is also shown to increase the bandgap from 0.98 to 1.03 eV while maintaining the same level of subbandgap absorption. Postfabrication device annealing was shown to benefit devices with higher Cu/Zn + Sn ratios but hinder devices further deviating from stoichiometry, which is attributed to pn‐junction degradation.

中文翻译：

高VOC单晶Cu2ZnSnSe4太阳能电池的制备与特性

Cu ₂ ZnSnSe ₄演示了开路电压达到450 mV的单晶太阳能电池。分析了高低压电池之间的关键性能差异，并与最新的薄膜器件进行了比较。评估了两种不同成分的贫铜吸收剂与表面处理的关系。温度依赖的合资企业的测量被用来评估界面钝化的功效。与铜含量较高的晶体相比，铜含量较低的晶体需要更积极的化学处理，以实现最大的收益。空穴浓度通过霍尔特性确定，密度较小对应于较低的铜浓度。加上使用寿命短，这些载流子密度显示出限制了长波长下的收集，这样可以减少单晶器件中的电流。铜浓度的降低还表明能带隙从0.98 eV增加到1.03 eV，同时保持了相同的亚带隙吸收水平。研究表明，后加工设备退火有利于具有较高Cu / Zn + Sn比值的设备，但会阻碍设备进一步偏离化学计量，这归因于pn结的降解。

更新日期：2020-06-04

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