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Strong Anisotropic Thermal Conductivity in Polycrystalline Layers of (AgxSn1‐xS)1.2(TiS2)2 with Prospects Toward Improved Thermoelectric Performance
Annalen Der Physik ( IF 2.2 ) Pub Date : 2020-06-04 , DOI: 10.1002/andp.201900551
Cong Yin 1 , Xuming Guo 1 , Hangtian Liu 1 , Zhiyu Chen 1 , Qing Hu 1 , Ran Ang 1, 2
Affiliation  

Anisotropic tuning is of crucial importance for designing and developing high‐performance thermoelectric materials. Here, a prominent anisotropic thermoelectric characteristic of Ag‐substituted misfit‐layered (SnS)1.2(TiS2)2 alloys is investigated in the perpendicular (in‐plane) and parallel (out‐of‐plane) to the pressing direction. In the in‐plane direction, the (AgxSn1‐xS)1.2(TiS2)2 alloys possess a highest power factor of 0.86 mW K−2 m−1 at 520 K, while in the out‐of‐plane direction the lowest lattice thermal conductivity (0.37 W K−1 m−1) is achieved, which is driven by the natural intercalated structure where the out‐of‐plane phonon is strongly scattered without affecting the in‐plane mobility. Moreover, along the in‐plane orientation, the introduced point defects due to the substitution of Sn by Ag trigger a significant reduction of lattice thermal conductivity. In contrast, along the out‐of‐plane orientation, the decreased carrier concentration enables a large Seebeck coefficient and power factor, ultimately ensuring high thermoelectric performance. The present finding in the misfit‐layered chalcogenide opens up a new route to manipulating thermoelectrics via anisotropy engineering.

中文翻译:

(AgxSn1-xS)1.2(TiS2)2的多晶层中的强各向异性导热性,有望改善热电性能

各向异性调谐对于设计和开发高性能热电材料至关重要。在此,研究了Ag取代错配层(SnS)1.2(TiS 22合金在与挤压方向垂直(面内)和平行(面外)内的显着各向异性热电特性。在面内方向上,(Ag x Sn 1- x S)1.2(TiS 22合金在520 K时的功率因数最高,为0.86 mW K -2 m -1方向最低晶格导热率(0.37 WK -1 m-1)是由自然插层结构驱动的,其中平面声子在不影响平面内迁移率的情况下强烈散布。此外,沿着面内取向,由于用Ag替代Sn所引起的引入点缺陷会导致晶格热导率显着降低。相反,沿着面外方向,降低的载流子浓度可实现较大的塞贝克系数和功率因数,从而最终确保高热电性能。目前在错配层硫属化物中的发现为通过各向异性工程操纵热电学开辟了一条新途径。
更新日期:2020-06-04
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