A transistor with a two‐dimensional electron gas (2DEG) channel at the hetero‐oxide structure is proposed by Cheol Seong Hwang and co‐workers in article number 1901286. The negative voltage stress on the gate induces the migration of oxygen vacancies through the gate oxide, resulting in a feasible 2DEG conductance for transistor operation. This will contribute to understanding the principles of 2D electronic devices.

中文翻译：

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2D电子产品：在Al2O3 / SrTiO3界面上带有2D电子气体通道的晶体管的阈值电压偏移的起因（Adv。Electron Mater。6/2020）

Cheol Seong Hwang及其同事在文章编号1901286中提出了一种在异氧化物结构上具有二维电子气（2DEG）通道的晶体管。栅极上的负电压应力会导致氧空位迁移通过栅极氧化物，导致晶体管操作可行的2DEG电导。这将有助于理解2D电子设备的原理。