Selective Dissolution Resistance Control of EUV Photoresist Using Multiscale Simulation: Rational Design of Hybrid System,Macromolecules

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Selective Dissolution Resistance Control of EUV Photoresist Using Multiscale Simulation: Rational Design of Hybrid System
Macromolecules ( IF 5.1 ) Pub Date : 2020-06-02 , DOI: 10.1021/acs.macromol.9b02378
Muyoung Kim _{1,

2} , Junghwan Moon _{1,

2} , Sungwoo Park ₂ , Maenghyo Cho _{1,

2}

Affiliation

A photoresist (PR) that can be fabricated in sub-10 nm patterns with the introduction of extreme ultraviolet lithography (EUVL) is a key requirement for transistor downsizing. To produce such ultrafine patterns, assigning small molecular components on the edge surface is a fundamental approach; however, lightweight constituents (PR chain) trigger severe polymer loss in unexposed regions (dark loss) during the dissolution process, thus destroying the uniformity of the pattern. Using computational modeling, we designed a new hybrid-type PR that can eliminate the dark loss of the low-M_n polymer (≤5 kg/mol) by integrating the positive-tone resist (deprotection) with the negative one (cross-linking). Through the selective cross-linking reaction on protection side groups, chemical linkages are generated exclusively for the unexposed chains and adequately endure the aqueous treatment. Moreover, the accurately controlled cross-link density enables suppression of resist swelling. Such improvements result in the smoothing of the line edge roughness (LER) for the hybrid pattern at the sub-10 nm scale. To set up the design rule of the proposed system, physical correlation among the chain size–dark loss–LER was thoroughly investigated, and the PR chain of 54-mers (10 kg/mol) was shown to exhibit the best LER quality with the mild condition of dark loss (≤11 mol %) and the moderate chain dimension (R_g ∼ 2 nm). The sequential multiscale simulation used in this computational approach allows a full description of the photochemistry in the EUVL process at the molecular level, which involves phototriggered acid activation/diffusion, deprotection, PR dissolution, and cross-linking reaction, and also provides reliable LER prediction, consistent with experimental observations.

中文翻译：

多尺度仿真的EUV光刻胶选择性溶解电阻控制：混合系统的合理设计

可以通过引入极紫外光刻（EUVL）制成低于10 nm的图案的光刻胶（PR）是缩小晶体管尺寸的关键要求。为了产生这样的超精细图案，在边缘表面分配小分子成分是一种基本方法。但是，在溶解过程中，轻质成分（PR链）会在未曝光区域引发严重的聚合物损失（暗损失），从而破坏了图案的均匀性。使用计算模型，我们设计了一种新的混合型PR，可以消除低M _n的暗损耗。通过将正性抗蚀剂（脱保护）和负性抗蚀剂（交联）结合在一起，制成聚合物（≤5kg / mol）。通过保护侧基上的选择性交联反应，专门为未暴露的链生成化学键，并充分耐受水性处理。此外，精确控制的交联密度能够抑制抗蚀剂溶胀。这样的改进导致混合图案的线边缘粗糙度（LER）在10 nm以下的尺度上变得平滑。为建立拟议系统的设计规则，对链大小-暗损失-LER之间的物理相关性进行了彻底研究，并且54-mers（10 kg / mol）的PR链表现出最佳的LER质量，且链长-暗损耗的温和条件（≤11mol％）和中等链尺寸（R _g〜2 nm）。此计算方法中使用的顺序多尺度模拟可以在分子水平上完整描述EUVL过程中的光化学，涉及光引发的酸激活/扩散，脱保护，PR溶解和交联反应，还提供可靠的LER预测，与实验观察结果一致。

更新日期：2020-06-23

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