Abstract The p-Si/n-ZnO:La heterojunctions were obtained using different dopant levels (0.2, 0.4, 0.6, 0.8 and 1%) nanostructured ZnO films. To characterize the electrical behavior of these structures, the current-voltage (I-V) analysis were performed. It was observed that all of them showed good rectifying behavior. The diode parameters were determined by using different methods. To characterize the photovoltaic behavior of these diodes, I-V measurements were performed under illuminations (20–100 mW/cm2). The results indicated that obtained photodiode exhibited a good photoconducting behavior.

中文翻译：

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使用溶胶凝胶衍生的纳米结构 ZnO:La 薄膜在 p-Si 上获得 pn 异质结的电学和光伏特性

摘要 p-Si/n-ZnO:La 异质结是使用不同掺杂水平（0.2、0.4、0.6、0.8 和 1%）的纳米结构 ZnO 薄膜获得的。为了表征这些结构的电气行为，进行了电流-电压 (IV) 分析。观察到它们都显示出良好的整流行为。二极管参数通过使用不同的方法确定。为了表征这些二极管的光伏特性，在照明 (20–100 mW/cm2) 下进行了 IV 测量。结果表明得到的光电二极管表现出良好的光电导行为。