Abstract In this paper, the calculation of dopant concentration for 200 mm floating zone silicon was carried out. The numerical model includes natural convection, thermocapillary convection, electromagnetic force, and rotation of the melt. The dopant concentration was obtained using steady-state calculation of dopant convection and diffusion. Through the comparison between the melt flow and normalized resistivity distribution, we investigated that, besides the well-known separation point, there was a secondary minimum resistivity near external triple point. This phenomenon was also indicated in previous experimental result, and thus was confirmed that the phenomenon was caused by strong electromagnetic force at external triple point.

中文翻译：

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200 毫米（8 英寸）浮区硅中掺杂剂浓度的数值分析

摘要 本文对200 mm浮区硅的掺杂浓度进行了计算。数值模型包括自然对流、热毛细管对流、电磁力和熔体旋转。使用掺杂剂对流和扩散的稳态计算获得掺杂剂浓度。通过熔体流动和归一化电阻率分布的比较，我们研究了除了众所周知的分离点外，在外部三相点附近还有一个次要的最小电阻率。这种现象在之前的实验结果中也有体现，由此证实该现象是由外部三相点处的强电磁力引起的。