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Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures
Semiconductors ( IF 0.6 ) Pub Date : 2020-06-03 , DOI: 10.1134/s1063782620060160
V. A. Shutaev , E. A. Grebenshchikova , V. G. Sidorov , M. E. Kompan , Yu. P. Yakovlev

Abstract

The impedance and capacitive properties of Pd/oxide/InP structures are investigated at 300 K in the frequency range of 10–1–10–5 Hz in air and in a nitrogen–hydrogen gas medium. The characteristics of structures in both media are interpreted based on a parallel RC-chain model with series resistance. The structure resistance decreases in the presence of hydrogen by three orders of magnitude, while the capacitance increases by 1–3 orders of magnitude depending on the frequency, which is possibly associated with the formation of positively charged centers in the oxide. Hysteresis is found in the capacitance–voltage characteristics in the medium with hydrogen, which is possibly caused by the ionic polarization of centers. It is shown that the total charge of centers measured in units of electrons almost coincides with the number of hydrogen atoms absorbed by palladium.



中文翻译:

氢对Pd / Oxide / InP结构阻抗的影响

摘要

在空气和氮气-氢气介质中,在300 K的10 –1 –10 –5 Hz频率范围内,研究了Pd /氧化物/ InP结构的阻抗和电容特性。基于并行RC解释两种介质中结构的特征串联电阻的链模型。在氢存在下,结构电阻降低三个数量级,而电容根据频率增加1-3个数量级,这可能与氧化物中带正电中心的形成有关。在含氢介质中的电容-电压特性中发现磁滞现象,这可能是由于中心的离子极化引起的。结果表明,以电子为单位测量的中心的总电荷几乎与钯吸收的氢原子数一致。

更新日期:2020-06-03
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