Abstract

The results of studying the frequency and temperature dependences of the ac electrical conductivity of FeGaInSe₄ crystals are presented. It is found that the systematic feature σ ∝ f ^s (0.1 ≤ s ≤ 1.0) is satisfied for the electrical conductivity at the temperatures under study in the frequency range f = 5 × 10⁴–10⁶ Hz. The activation energies are determined from the temperature dependences of the conductivity. It is shown that the frequency dependence of the conductivity in an FeGaInSe₄ crystal can be explained using the multiplet model, hence, the conductivity in these crystals is controlled by the band-hopping mechanism.

中文翻译：

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FeGaInSe 4的交流电导率

摘要

给出了研究FeGaInSe ₄晶体的交流电导率的频率和温度依赖性的结果。可以发现，系统的特征σα ˚F ^小号（0.1≤小号≤1.0）在温度下研究的频率范围内满足了电导率˚F = 5×10 ⁴ -10 ⁶赫兹。活化能由电导率的温度依赖性决定。结果表明，FeGaInSe ₄晶体中电导率的频率依赖性可以用多重模型来解释，因此，这些晶体中的电导率是由带跳变机制控制的。