Semiconductors ( IF 0.6 ) Pub Date : 2020-06-03 , DOI: 10.1134/s1063782620060147 E. V. Rut’kov , E. Yu. Afanas’eva , N. R. Gall
Abstract
The equilibrium transport of atomic carbon between the Rh surface and bulk, which controls the kinetics of the phase transition resulting in graphene growth or destruction, is investigated. The difference between the activation energy Es1 of atomic-carbon dissolution and the energy E1s of its segregation from the bulk to the surface is found to be ΔE = 0.7 eV. The temperature dependence of the critical coating Neq = Neq(T) in the chemisorbed carbon layer is measured. It is a 2D phase transition that takes place at this coating, and graphene islands start to grow: for example, Neq = 7.7 × 1014 cm–2 at T = 1800 K, and Neq = 3.1 × 1014 cm–2 at T = 1000 K.
中文翻译:
石墨烯形成与破坏过程中Rh表面与本体之间的原子碳迁移
摘要
研究了Rh表面与主体之间原子碳的平衡迁移,该迁移控制着导致石墨烯生长或破坏的相变动力学。发现原子-碳溶解的活化能E s 1和其从主体到表面的偏析能E 1 s之间的差为ΔE = 0.7 eV。测量了化学吸附的碳层中的临界涂层的温度依赖性N eq = N eq(T)。这是在此涂层上发生的二维相变,并且石墨烯岛开始生长:例如,N eq在T = 1800 K时= 7.7×10 14 cm –2,而在T = 1000 K时N eq = 3.1×10 14 cm –2。