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Formation of a Two-Phase Structure in CH 3 NH 3 PbI 3 Organometallic Perovskite
Semiconductors ( IF 0.6 ) Pub Date : 2020-06-03 , DOI: 10.1134/s1063782620060020
D. V. Amasev , V. G. Mikhalevich , A. R. Tameev , Sh. R. Saitov , A. G. Kazanskii

Abstract

The effect of annealing of a CH3NH3PbI3 organometallic perovskite film on its electrical, photoelectrical, and optical properties is studied. It is shown that annealing at the temperature Ta > 140°C results in the formation of a two-phase structure consisting of perovskite and lead iodide, whose relative content depends on the conditions of annealing, specifically, on the annealing temperature. The formation of PbI2 in the perovskite structure yields a decrease in the conductivity and photoconductivity of the material. The studies suggest the possibility of the formation of planar structures composed of semiconductor materials with different band gaps, 1.6 eV (CH3NH3PbI3) and 2.4 eV (PbI2).



中文翻译:

CH 3 NH 3 PbI 3有机金属钙钛矿中两相结构的形成

摘要

研究了CH 3 NH 3 PbI 3有机金属钙钛矿薄膜退火对其电,光电和光学性能的影响。结果表明,在该温度下进行退火Ť一个> 140℃导致的两相结构,其中包括钙钛矿和碘化铅,其相对含量取决于退火条件,具体的,关于退火温度的形成。钙钛矿结构中PbI 2的形成导致材料的电导率和光电导率降低。研究表明可能形成由带隙为1.6 eV(CH 3 NH)的半导体材料组成的平面结构3 PbI 3)和2.4 eV(PbI 2)。

更新日期:2020-06-03
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