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Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11 n ) GaAs Substrates by AP-MOVPE: Comparative Study
Semiconductors ( IF 0.6 ) Pub Date : 2020-06-03 , DOI: 10.1134/s106378262006010x
J. Laifi , A. Bchetnia

Abstract

The impact of carrier gas on the GaN layers properties grown by atmospheric pressure metal-organic vapor-phase epitaxy (AP-MOVPE) on (001) and (11n) GaAs substrates were investigated. The Arrhenius plots of growth rate deduced from laser reflectometry measurements give an activation energy of Ea1 = 0.045 eV when the H2 was used as the carrier gas. In the case of using N2 as the carrier gas, the results give Ea2 = 0.081 eV as a value of activation energy, which is approximately 2 times greater than Ea1. Scanning electron microscopy results show that when N2 is used, the resulting material quality is low, but the use of H2 is successful to prevent the cracking of GaN layers and results in improvement of crystalline properties. From the X-ray diffraction result, we conclude that both (001) and (113) GaAs substrate orientations as well as the use of H2 as the carrier gas favors the GaN growth with cubic structure, whereas the GaN hexagonal structure is favored for growth on (112) and (111) GaAs substrates orientations with N2. Cathodoluminescence measurements show that a mechanism of phase transformation occurs when the growth temperature rise from 800 to 900°C.



中文翻译:

载气对AP-MOVPE在(001)和(11 n)GaAs衬底上生长的GaN层性能的影响:对比研究

摘要

研究了载气对大气压金属有机物气相外延(AP-MOVPE)在(001)和(11 n)GaAs衬底上生长的GaN层性能的影响。当将H 2用作载气时,由激光反射法测量得出的Arrhenius生长速率图可得出E a1 = 0.045 eV的活化能。在使用N 2作为载气的情况下,结果得出E a2 = 0.081 eV作为活化能的值,大约是E a1的2倍。扫描电子显微镜结果表明,当N 2使用H 2时,得到的材料质量低,但是H 2的使用成功地防止了GaN层的破裂,并且导致了晶体性质的改善。从X射线衍射结果可以得出结论,(001)和(113)GaAs衬底取向以及使用H 2作为载气都有利于立方结构的GaN生长,而GaN六方结构则有利于N(2)在(112)和(111)GaAs衬底上生长。阴极发光测量表明,当生长温度从800℃升高到900℃时,会发生相变机制。

更新日期:2020-06-03
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