In this work, the high-temperature reliability of the Black Phosphorus Trench (BP-T) MOSFET device has been analyzed. When the temperature is very high (500 K), the proposed device (BP-T-MOSFET) shows very high reliability with less effects in the device performance. The device is also calibrated with the experimental data. All the simulation has been performed using ATLAS-3D device simulator. BP-T-MOSFET shows high-temperature reliability in terms of reduced sub-threshold current, hot-electron injection gate current, and impact ionization substrate current. Further, higher switching ratio (I_on/I_off), electron mobility, and electron velocity have also been observed owing to the electrical properties of black phosphorus used in the trench gate which shows the potential in a high-temperature environment. Owing to trench structure and electrical properties of black phosphorus, BP-T-MOSFET has significant device efficiency and low leakage currents at high temperatures which prove as highly shrieked MOS device applications in harsh temperature environment.

在这项工作中，已经分析了黑磷沟道（BP-T）MOSFET器件的高温可靠性。当温度很高（500 K）时，建议的器件（BP-T-MOSFET）具有很高的可靠性，而对器件性能的影响较小。该设备还通过实验数据进行了校准。所有仿真都是使用ATLAS-3D设备仿真器执行的。BP-T-MOSFET在降低的亚阈值电流，热电子注入栅极电流和冲击电离衬底电流方面表现出高温可靠性。此外，更高的开关比（I _on / I _off由于在沟槽栅中使用的黑磷的电特性在高温环境中显示出电势，因此也观察到了电子迁移率和电子速度。由于黑磷的沟槽结构和电学特性，BP-T-MOSFET在高温下具有显着的器件效率和低泄漏电流，这被证明是在恶劣温度环境下备受关注的MOS器件应用。