This paper describes different architectures of a rectangular core shell double gate junctionless field effect transistor (RCS-DGJLT). The device performance has been studied when the core has either the same or opposite type of doping to the shell. It is found that an RCS-DGJLT with an oppositely doped core without heavily doped source/drain (S/D) extension regions exhibits an OFF current of ~10 −14 A and an ON current of ~10 −5 A. In addition, an RCS-DGJLT with heavily doped S/D extension and different placements of dopant concentration in the shell and core region is explored, so that control of charge carriers in the device during the ON and OFF states can be achieved. Further, the ON current is enhanced by doping engineering in the shell and core region without significantly degrading the OFF current. The RCS-DGJLT with heavily doped S/D extension along with oppositely doped core exhibits an OFF current of ~10 −12 A and an ON current of ~10 −4...

中文翻译：

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掺杂工程可增强矩形核壳双栅极无结场效应晶体管的性能

本文介绍了矩形芯壳双栅极无结场效应晶体管（RCS-DGJLT）的不同架构。当内核对外壳进行相同或相反类型的掺杂时，已经研究了器件性能。发现具有相反掺杂的芯而没有重掺杂的源极/漏极（S / D）扩展区域的RCS-DGJLT表现出约10 -14 A的截止电流和约10 -5 A的导通电流。探索了一种具有重掺杂S / D扩展和壳和核区域中不同浓度的掺杂剂浓度的RCS-DGJLT，从而可以实现器件在导通和截止状态下的电荷载流子控制。此外，通过在壳和芯区域中进行掺杂工程来增强导通电流，而不会显着降低截止电流。