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Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-06-02 , DOI: 10.1002/pip.3298 Faris Akira Bin Mohd Zulkifly 1 , Yuta Shiratori 1 , Kazuyoshi Nakada 1 , Shinsuke Miyajima 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-06-02 , DOI: 10.1002/pip.3298 Faris Akira Bin Mohd Zulkifly 1 , Yuta Shiratori 1 , Kazuyoshi Nakada 1 , Shinsuke Miyajima 1
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Crystalline silicon surface passivation effect of intrinsic hydrogenated amorphous silicon (i‐a‐Si:H) films deposited by radio‐frequency facing target sputtering (RF‐FTS) using a two‐step deposition technique was investigated. In the two‐step deposition technique, an i‐a‐Si:H layer was deposited at a high sputtering power condition after the deposition of i‐a‐Si:H at a low sputtering power condition. The two‐step deposition technique drastically improved the passivation quality of i‐a‐Si:H compared with a conventional single‐step deposition technique. Only 0.5‐nm‐thick i‐a‐Si:H deposited at a low sputtering power suppresses the initial sputtering damage to the crystalline silicon surface. A high average deposition rate of 14.1 nm/min was also achieved. A non‐textured silicon heterojunction solar cell using an i‐a‐Si:H passivation layer deposited by the two‐step method shows a conversion efficiency of 17.4% (Voc = 0.679 V, Jsc = 35.0 mA/cm2, FF = 0.732).
中文翻译：
双层结构对硅异质结太阳能电池高速溅射氢化非晶硅表面钝化质量的影响
研究了采用两步沉积技术通过射频面对靶溅射（RF-FTS）沉积的本征氢化非晶硅（i-Si：H）薄膜的晶体硅表面钝化效果。在两步沉积技术中，在低溅射功率条件下沉积i-a-Si：H之后，在高溅射功率条件下沉积i-a-Si：H层。与传统的单步沉积技术相比，两步沉积技术极大地提高了i-a-Si：H的钝化质量。在低溅射功率下仅沉积0.5纳米厚的i-a-Si：H可以抑制初始溅射对晶体硅表面的损害。还实现了14.1 nm / min的高平均沉积速率。使用i-a-Si的无纹理硅异质结太阳能电池：V oc = 0.679 V，J sc = 35.0 mA / cm 2，FF = 0.732）。
更新日期：2020-06-02
中文翻译：
双层结构对硅异质结太阳能电池高速溅射氢化非晶硅表面钝化质量的影响
研究了采用两步沉积技术通过射频面对靶溅射（RF-FTS）沉积的本征氢化非晶硅（i-Si：H）薄膜的晶体硅表面钝化效果。在两步沉积技术中，在低溅射功率条件下沉积i-a-Si：H之后，在高溅射功率条件下沉积i-a-Si：H层。与传统的单步沉积技术相比，两步沉积技术极大地提高了i-a-Si：H的钝化质量。在低溅射功率下仅沉积0.5纳米厚的i-a-Si：H可以抑制初始溅射对晶体硅表面的损害。还实现了14.1 nm / min的高平均沉积速率。使用i-a-Si的无纹理硅异质结太阳能电池：V oc = 0.679 V，J sc = 35.0 mA / cm 2，FF = 0.732）。
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