The layered materials, two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted increasing attention because of their unique properties in the atomic structures, bandgaps, electronic properties, electrochemistry activities, and the potential applications in devices. Till now, most research has focused on the group VIB metal TMDs, like molybdenum disulfide (MoS₂) and tungsten disulfide (WS₂), whereas TMDs composed of other groups metals are not widely explored. Herein, we present and summarize the group 10 transition metal platinum (Pt) and palladium (Pd) dichalcogenides, like platinum diselenide (PtSe₂), palladium diselenide (PdSe₂), platinum disulfide (PtS₂) and palladium disulfide (PdS₂) to discuss their special points as the published discussion on group VIB metal TMDs, and find the similarities and the differences between the metals. This review will focus on the group 10 noble metal dichalcogenides of their atomic structure, synthetic approaches, defects and dopants, layer dependent band structure, electronic properties, electrochemistry activities and the broadband opto-electronic devices.

二维（2D）过渡金属二卤化金属（TMD）层状材料因其在原子结构，带隙，电子性质，电化学活性以及在装置中的潜在应用方面的独特性能而受到越来越多的关注。到目前为止，大多数研究都集中在VIB类金属TMD上，例如二硫化钼（MoS ₂）和二硫化钨（WS ₂），而由其他金属族组成的TMD尚未得到广泛研究。在这里，我们介绍并总结了第10组过渡金属铂（Pt）和钯（Pd）二硫化氢，如二硒化铂（PtSe ₂），二硒化钯（PdSe ₂），二硫化铂（PtS ₂）和二硫化钯（PdS₂）讨论它们的特殊之处，作为已发表的关于VIB组金属TMD的讨论，并找出金属之间的异同。这篇综述将集中在第10组贵金属二卤化硅的原子结构，合成方法，缺陷和掺杂剂，层依赖性能带结构，电子性质，电化学活性和宽带光电器件上。