Abstract The isolation of graphene on an insulating substrate has provided new opportunities for the fabrication of electronic devices with radically new geometries and structures. The use of single-layer graphene as an electrode has enabled the development of novel electronic device architectures that exploit the unique atomically thin structure of the material, which also includes a low density of states at its charge neutrality point. In this work, we present the first example of a vertical Schottky junction photodiode based on the graphene—organic semiconductor–metal heterostructure. The n-type N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) organic semiconductor was thermally deposited onto chemical vapor deposition (CVD)-grown single-layer graphene. The tunable Schottky injection barrier permitted tuning of the diode rectification ratio by more than two orders of magnitude upon application of gate biases, which increased the photocurrent but suppressed the dark current of the photodiodes. Tuning of the photovoltaic properties of the devices was also confirmed, indicating that the device architecture based on the work function tunability of graphene could provide a versatile strategy for enhancing the performance of organic photodiodes.

中文翻译：

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基于石墨烯-有机半导体异质结构的肖特基结光电二极管

摘要 在绝缘基板上隔离石墨烯为制造具有全新几何形状和结构的电子器件提供了新的机会。使用单层石墨烯作为电极促进了新型电子器件架构的开发，该架构利用了材料独特的原子级薄结构，其中还包括在其电荷中性点的低态密度。在这项工作中，我们展示了基于石墨烯-有机半导体-金属异质结构的垂直肖特基结光电二极管的第一个例子。将 n 型 N,N'-二辛基-3,4,9,10-苝二甲酰亚胺 (PTCDI-C8) 有机半导体热沉积在化学气相沉积 (CVD) 生长的单层石墨烯上。可调谐肖特基注入势垒允许在施加栅极偏置时将二极管整流比调整两个数量级以上，这增加了光电流但抑制了光电二极管的暗电流。器件光伏特性的调节也得到证实，表明基于石墨烯功函数可调性的器件架构可以提供一种提高有机光电二极管性能的通用策略。