Abstract—

The main characteristics of memristive elements based on polythiophene made by Langmuir-Schaefer and spin-coating methods have been compared. The stability of the elements for more than 500 cycles of electric rewriting for both methods has been demonstrated. It has been shown that the elements made by spin-coating method have slower switching kinetics, which, presumably, is associated with relatively higher homogeneity of the film surface. This research may be useful for the development of polythiophene memristive devices with reproducible stable characteristics suitable for various applications: from memory elements to wearable and implantable electronics, and neuromorphic computing systems.

中文翻译：

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分层和离心法制造的聚噻吩介导器件的比较

摘要—

比较了Langmuir-Schaefer生产的基于聚噻吩的忆阻元件的主要特性和旋涂方法。两种方法在超过500个电重写周期中都证明了元件的稳定性。已经表明，通过旋涂法制造的元件具有较慢的转换动力学，这大概与膜表面的相对较高的均匀性有关。这项研究对于开发具有可重现的稳定特性的聚噻吩忆阻器件可能有用，该特性适用于各种应用：从存储元件到可穿戴和可植入电子设备，以及神经形态计算系统。