Based on an analysis of differences between the experimentally measured temperature dependence of the current-voltage characteristic (I-V curve) of a laser diode bar (LDB) with AlGaAs/GaAs heterostructure and the dependence obtained in accordance with the well-known model of light-emitting diodes, assumptions were made about the sources of these differences. The agreement between the experimental and modeled dependences is significantly improved by taking into consideration the change in the resistance of LDB layers caused by temperature change. It is shown that when the injection current is known, the measured voltage drop across the LDB can be used to estimate the temperature of the diode active region in order to implement thermal stabilization for solid-state laser pumping systems based on high-power laser diodes.

中文翻译：

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激光二极管条电流-电压特性的温度依赖模型

基于对具有 AlGaAs/GaAs 异质结构的激光二极管棒 (LDB) 的电流-电压特性（IV 曲线）的实验测量温度依赖性与根据众所周知的光-发光二极管，对这些差异的来源进行了假设。通过考虑由温度变化引起的 LDB 层电阻变化，实验和建模相关性之间的一致性得到了显着改善。结果表明，当注入电流已知时，测得的 LDB 上的压降可用于估计二极管有源区的温度，以实现基于高功率激光二极管的固态激光泵浦系统的热稳定.