The influence of an external magnetic field on the phase-transition temperature for antiferromagnetic thin films is investigated. The computer modeling method for the antiferromagnetic Ising model with a thin film geometry is used. Films with thicknesses from 4 to 16 layers have been investigated. It is shown that the temperature of the antiferromagnetic phase transition decreases according to the square law as the external magnetic intensity increases. The rate of decrease of the phase-transition temperature depends on the film thickness and on the relationship between the exchange integrals on the surface and the bulk of the system. For each system, there is a limit value of the magnetic intensity such that no antiferromagnetic phase transition occurs if it is exceeded. The dependence of the limit value of the magnetic intensity on the relationship between the exchange integrals obeys the square law as well.

中文翻译：

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磁场对反铁磁薄膜相变的影响：计算机建模研究

研究了外部磁场对反铁磁薄膜相变温度的影响。使用具有薄膜几何形状的反铁磁伊辛模型的计算机建模方法。已经研究了厚度为4至16层的膜。结果表明，随着外磁强度的增加，反铁磁相变的温度根据平方律降低。相变温度的降低速率取决于膜厚度以及表面上的交换积分与体系整体之间的关系。对于每个系统，都有一个磁强度的极限值，这样，如果超过该值，则不会发生反铁磁相变。