The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QD-nanopits structures in CdZnHgTe quasyternary material system. We have shown that for the CdZnHgTe solid solution deposited on the CdTe substrate, the sign of the critical energy and volume of island is changed at the critical strain of ɛ^* = 0.006 and ɛ^* = 0.009 (ɛ = Δa/a), It is assumed that the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits at ɛ = ɛ^*. Obviously, at the small mismatch (ɛ < ɛ^*) the bulk nucleation mechanism dominates. However, at ɛ > ɛ^*, when the energy barrier becomes negative and a large mismatch provides a low-barrier path for the formation of dislocations, the nucleation of pits becomes preferable energetically.

应用连续弹性模型定量研究了CdZnHgTe四元材料体系中量子点，纳米坑和QD-纳米接头结构的生长特征和成核机理。我们已经表明，对于沉积在CdTe的基板上的CdZnHgTe固溶体，临界能量和岛的体积的符号被在ɛ的临界应变改变^* = 0.006和ɛ ^* = 0.009（ɛ=Δ一/一个），假定成核的机理从quantum = to ^*时的量子点的生长改变为纳米点的成核。显然，在小的失配（ɛ<ɛ ^*）下，本体成核机制占主导地位。但是，在ɛ>ɛ ^*当能垒变为负且较大的失配为位错的形成提供低的势垒路径时，凹坑的核化在能量上变得优选。