Abstract

It is shown that a film consisting of the Mo–O, Mo–Ba–O, and Ba–O compounds is formed in the ion-implanted layer upon implantation of MoO₃ with the Ba⁺ ions. Such a process leads to a sharp variation in the density of state of valence electrons, a decrease in work function eφ to 2.7 eV, a decrease in band gap E_g by a factor of about 1.5, and an increase in maximum coefficient of the secondary electron emission σ_m by a factor of 1.5. It is shown that the emission efficiency of the secondary electrons of the near-surface layer of pure Mo is significantly higher than the emission efficiency of the ion-implanted Mo layers. Thus, an increase in coefficient σ_m after the ion implantation is predominantly due to a decrease in surface work function eφ. Heating of the ion-implanted MoO₃ to 900 K leads to a decrease in work function eφ to 2 eV, and coefficient σ_m increases when temperature increases to 1000 K.

中文翻译：

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Ba +离子注入对MoO 3 / Mo（111）薄膜组成和电子性能的影响

摘要

结果表明，在MoO _3中注入Ba ⁺离子后，在离子注入层中形成了由Mo-O，Mo-Ba-O和Ba-O化合物组成的膜。这样的过程导致在价电子，功函数的降低的状态的密度急剧变化ë φ至2.7电子伏特，带隙的降低Ë_克由约1.5的因子，并增加了的最大系数二次电子发射σ_米通过的1.5倍。结果表明，纯钼的近表面层的二次电子的发射效率明显高于离子注入的钼层的发射效率。因此，增加了在系数σ_米在离子注入之后主要是由于在表面功函数的降低ë φ。离子注入的MoO的加热₃〜900所ķ导致功函数的降低ë φ2电子伏特，和系数σ_米时增加温度增加至1000 K.