Abstract

A non-destructive method of scanning probe microscopy for simultaneous measurements of the surface topography and electric field (charge, potential) distribution is demonstrated. The surface is scanned by the tuning fork method, the interaction with the surface is carried out by the sharp edge of the silicon chip mounted on one of the prong of the quartz resonator. The detection of electric potentials was performed using a field-effect transistor with a nanowire channel formed at the apex of the probe. Due to the low Q factor of the oscillatory system, scanning with standard algorithms of probe movement leads to fast wearing and even destruction of the apex of the probe. An original scanning algorithm was developed that minimizes the interaction time between the probe and the object under study. The minimal time at each scanning surface point is 1.0–1.6 ms and is determined response time of the field-effect transistor to a change in the detected electric field (the measuring time per frame is 20–30 min). The spatial resolution of the method is 10 nm for topography and 20 nm for the sample field profile. The field resolution of our chips is in the range of 2–5 mV and is determined by the sensitivity of the nanowire of the field effect transistor and the distance from the nanowire to the probe apex.

中文翻译：

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基于带有纳米线通道的场效应晶体管的局部探针检测电势表面分布

摘要

证明了一种用于同时测量表面形貌和电场（电荷，电势）分布的扫描探针显微镜的非破坏性方法。用音叉法扫描表面，与表面的相互作用是通过安装在石英谐振器尖头之一上的硅芯片的尖锐边缘进行的。使用场效应晶体管进行电势检测，该场效应晶体管在探头的顶点处形成纳米线通道。由于低Q作为振荡系统的主要因素，使用标准的探针移动算法进行扫描会导致探针的快速磨损甚至破坏。开发了一种原始的扫描算法，可最大程度地减少探针和被研究对象之间的相互作用时间。每个扫描表面点的最短时间为1.0–1.6 ms，并确定场效应晶体管对检测到的电场变化的响应时间（每帧的测量时间为20–30分钟）。该方法的空间分辨率对于地形为10 nm，对于样品场轮廓为20 nm。我们芯片的场分辨率在2至5 mV范围内，取决于场效应晶体管纳米线的灵敏度以及从纳米线到探针顶点的距离。