Abstract

Minimizing the impact of radiation-induced degradation in dilute nitride based optoelectronic devices is crucial in its applications. The effects of 1-MeV electron irradiation (of 1 × 10¹⁴–1 × 10¹⁶ e/cm² range) on undoped GaInNAs|GaAs single quantum-well (QW) structure has been studied by low-temperature photoluminescence (PL). PL spectra of GaInNAs|GaAs QW are measured before and after electron irradiation. The results show a slight enhancement of the PL intensity in relatively low electron fluence, and then subsequent deterioration of PL with the increase of cumulative electron fluences. The enhancement in PL intensity at low electron doses is explained by recombination-enhanced defect reaction model, and the degradation at high electron doses is explained by irradiation-induced defects in the lattice.

中文翻译：

---

1-MeV电子辐照对GaInNAs | GaAs单量子阱结构的光致发光的影响

摘要

在基于氮化物的光电子器件中，使辐射引起的退化的影响最小化至关重要。1-MeV电子辐射的影响（1×10 ¹⁴ –1×10 ¹⁶ e / cm ²通过低温光致发光（PL）研究了非掺杂的GaInNAs | GaAs单量子阱（QW）结构上的最大范围。GaInNAs | GaAs QW的PL光谱是在电子辐照之前和之后测量的。结果表明，在相对较低的电子注量下，PL强度略有增强，然后随着累积电子注量的增加，PL随之劣化。低电子剂量下PL强度的增强可以通过重组增强的缺陷反应模型来解释，而高电子剂量下的降解可以通过辐照引起的晶格缺陷来解释。