Abstract

Using the Green’s function method within the tight-binding approximation, the electronic structure of an infinite silicon-carbide sheet, and nanoribbons and one-dimensional chains cut from it, is considered. Analytical expressions for band gaps, electron effective masses and characteristic velocities are derived. The effect of metal and dielectric substrates on the band characteristics is discussed.

中文翻译：

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低维碳化硅结构：电子光谱特性的分析估计

摘要

在紧密结合近似中使用格林函数方法，考虑了无限大的碳化硅片的电子结构，以及从中切割出的纳米带和一维链。推导了带隙，电子有效质量和特征速度的解析表达式。讨论了金属和介电衬底对带特性的影响。