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Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures
Semiconductors ( IF 0.6 ) Pub Date : 2020-05-09 , DOI: 10.1134/s1063782620050097
A. A. Podoskin , D. N. Romanovich , I. S. Shashkin , P. S. Gavrina , Z. N. Sokolova , S. O. Slipchenko , N. A. Pikhtin

Abstract

A lumped model of the dynamics of the controlled switching of high-Q closed-mode structures in rectangular large cavities (up to 1 × 1 mm and larger) based on AlGaAs/InGaAs/GaAs laser heterostructures is presented. The model considers the modulation of the useful power of a closed-mode structure due to controlled generation switching to an alternative closed mode. Generation-switching control between closed mode structures is implemented due to a variation in the optical loss of one structure. A variation in the optical loss occurs due to an increase in interband optical absorption due to the quantum-confined Stark effect upon the application of voltage to a laser crystal segment in the closed-mode propagation region.



中文翻译:

基于AlGaAs / InGaAs / GaAs激光异质结构的大矩形腔内闭模结构切换控制模型

摘要

提出了基于AlGaAs / InGaAs / GaAs激光异质结构的矩形大腔体(最大1×1 mm及更大)中高Q闭模结构的受控开关动力学的集总模型。该模型考虑了由于受控发电切换到替代闭合模式而导致的闭合模式结构的有用功率的调制。由于一种结构的光损耗的变化,实现了在封闭模式结构之间的发电切换控制。由于在将电压施加到闭合模式传播区域中的激光晶体段上施加量子限制的斯塔克效应而引起的带间光吸收的增加,导致光损耗的变化。

更新日期:2020-05-09
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