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Formation of Multilayer Structures with Integrated Membranes Based on Porous Silicon
Semiconductors ( IF 0.7 ) Pub Date : 2020-05-09 , DOI: 10.1134/s1063782620050024
V. V. Bolotov , K. E. Ivlev , E. V. Knyazev , I. V. Ponomareva , V. E. Roslikov

Abstract

Multilayer integrated porous membranes are obtained in a monolithic frame containing two types of porous silicon: macroporous silicon with pore diameters up to 10 μm and channel silicon with channel diameters from 100 to 300 nm. A laboratory technology is proposed for preparing macroporous/channel silicon two-layer structures with the use of high-resistance n-Si substrates (1 Ω cm). The pore-formation mechanism and its effect on the morphology of porous layers for electrolytes using formic acid and ammonium hydroxide are discussed.



中文翻译:

基于多孔硅的集成膜多层结构的形成

摘要

在包含两种类型的多孔硅的整体式框架中获得多层集成多孔膜:孔径最大为10μm的大孔硅和沟道直径为100至300 nm的沟道硅。提出了一种实验室技术,该技术使用高电阻n -Si衬底(1Ωcm)来制备大孔/通道硅两层结构。讨论了甲酸和氢氧化铵在电解质多孔层中的成孔机理及其对形貌的影响。

更新日期:2020-05-09
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