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Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure
Semiconductors ( IF 0.6 ) Pub Date : 2020-05-09 , DOI: 10.1134/s1063782620050140
O. S. Soboleva , V. S. Golovin , V. S. Yuferev , P. S. Gavrina , N. A. Pikhtin , S. O. Slipchenko , A. A. Podoskin

Abstract

A 2D carrier transport model to be used in studying the spatial current dynamics in laser thyristors is presented. The model takes into account such features as optical feedback, impact ionization, and drift velocity saturation in strong electric fields. It is shown that there is current localization during laser-thyristor switch-on. A relationship is demonstrated between the distribution nonuniformity of the control current and its amplitude and position of the initial switch-on region. The time of laser-thyristor switch-on is 13 ns at a feed voltage of 26V, with a time of switch-on spreading over the entire 200-μm stripe width of ~65 ns. These parameters remain invariable irrespective of the switch-on spatial dynamics.



中文翻译:

基于AlGaAs / InGaAs / GaAs多结异质结构的激光晶闸管(λ= 905 nm)的空间接通动力学建模

摘要

提出了一种二维载流子传输模型,用于研究激光晶闸管中的空间电流动力学。该模型考虑了诸如光反馈,碰撞电离和强电场中的漂移速度饱和等特征。结果表明,在激光晶闸管导通期间存在电流局部化。证明了控制电流的分布不均匀性与其初始接通区域的幅度和位置之间的关系。在26V的供电电压下,激光晶闸管的导通时间为13 ns,导通时间分布在整个200μm的条带宽度约65 ns内。这些参数保持不变,与接通的空间动力学无关。

更新日期:2020-05-09
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