Abstract

This paper highlights the temperature factor in the experimental study of total absorption as a method for experimental validation and the study of the exciton–polariton light transfer mechanism near the fundamental absorption edge in semiconductor crystals with spatial dispersion. The results of experimental studies of temperature-dependent total exciton absorption are generalized. The experimentally determined critical temperatures above which total absorption becomes constant, the corresponding critical damping parameter, and longitudinal–transverse splittings for the studied semiconductors CdTe, GaAs, InP, ZnSe, and ZnTe are presented.

中文翻译：

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体半导体中激子极化子的温度依赖性总吸收

摘要

本文重点介绍了在总吸收实验研究中的温度因子，作为一种实验验证方法，以及在具有空间色散的半导体晶体的基本吸收边缘附近的激子-极化光传输机制的研究。概括了温度依赖性总激子吸收的实验研究结果。给出了实验确定的临界温度，在该温度以上，总吸收变为常数，相应的临界阻尼参数，以及研究的半导体CdTe，GaAs，InP，ZnSe和ZnTe的纵向-横向分裂。