Abstract

The effect of preliminary weak illumination at elevated temperatures on the photoelectric properties of undoped α-Si:H films is investigated. It is found that the dark conductivity and photoconductivity of films increases with the preliminary-illumination intensity, and the parameter γ determining the dependence of the photoconductivity on the illumination intensity decreases due to an increasing fraction of the bimolecular recombination of electrons at energy levels of the tail of the density of states of the conduction band. It is assumed that this effect may be induced by the presence of an uncontrolled oxygen impurity and an increase in the concentration of electrically active oxygen as a result of preliminary illumination of the films at elevated temperatures.

中文翻译：

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高温下初步照明下未掺杂氢化非晶硅薄膜光电性能的改变

摘要

研究了高温下的初步弱照明对未掺杂的α-Si：H薄膜的光电性能的影响。发现膜的暗电导率和光电导率随预照明强度的增加而增加，并且确定电子的电导率对照明强度的依赖性的参数γ由于电子的双分子重组在电子能级的增加而降低。导带状态密度的尾巴。可以认为，由于在高温下对薄膜进行了初步照明，存在不受控制的氧杂质和电活性氧浓度增加可能会引起这种效应。