Abstract

Coordinate distributions U(x) were calculated for the electric voltage across a magnetic field sensor scanning a magnetic carrier with recordings of pulsed magnetic fields from a linear inductor moved discretely with a given pitch above the magnetic carrier surface. The magnetic carrier was acted upon with pulses of one direction and with oppositely directed pulses. The characteristics of the magnetic field sensors used in experimental studies were expressed as analytical arctangent functions. An arctangent initial curve and hysteresis branches of the dependence of electric voltage U(H) across the magnetic field sensor on magnetic field strength when the sensor scans a magnetic carrier are presented. These curves correspond to the distribution of remanent magnetization in the magnetic carrier in a pulsed magnetic field. The sensitivity of the magnetic field sensors used in the calculations was \({{\gamma }_{{{\text{max}}1}}} = \) 1.0 mV cm/A, \({{\gamma }_{{{\text{max}}2}}} = \) 0.26 mV cm/A, \({{\gamma }_{{{\text{max}}3}}} = \) 2.8 mV cm/A. Sequences are established in which the remanent magnetization changes in the magnetic carrier exposed to unipolar and bipolar magnetic-field pulses. Hysteretic interference is represented as the interference of the distributions of the electric voltage across the sensor in a pulsed magnetic field U(x) along the coordinate x. The results of calculations of the magnitude of electric voltage U across the sensor are presented for layers of aluminum foil with a thickness on the order of 0.05 mm by hysteretic and anhysteretic methods. It is shown that the use of hysteretic interference can increase threefold or more the sensitivity of measuring instruments.

中文翻译：

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运动线性电感器磁场的磁滞干扰

摘要

计算跨磁场传感器的电压的坐标分布U（x），该磁场传感器扫描磁性载体，并记录线性电感器产生的脉冲磁场，该线性感应器以给定的间距离散移动到磁性载体表面上方。用一个方向的脉冲和相反方向的脉冲作用磁性载体。实验研究中使用的磁场传感器的特性表示为分析反正切函数。反正切初始曲线和磁滞分支取决于电压U（H）显示了当传感器扫描磁性载体时跨磁场传感器的磁场强度。这些曲线对应于脉冲磁场中磁性载体中剩余磁化强度的分布。计算中使用的磁场传感器的灵敏度为\（{{\ gamma} _ {{{\ text {max}} 1}}} = \） 1.0 mV cm / A，\（{{\ gamma} _ {{{\ text {max}} 2}}} = \） 0.26 mV cm / A，\（{{\ gamma} _ {{{{\ text {max}} 3}}} = \） 2.8 mV cm /一种。建立顺序，其中暴露于单极和双极磁场脉冲的磁性载体中的剩余磁化强度发生变化。磁滞干扰表示为脉冲磁场中跨传感器的电压分布的干扰沿坐标x的U（x）。通过滞后和滞后方法，给出了厚度为0.05毫米的铝箔层的传感器两端电压U的大小的计算结果。结果表明，使用磁滞干扰可以将测量仪器的灵敏度提高三倍或更多。