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The Effect of Temperature on the Development of a Contrast HSQ Electronic Resist
Russian Microelectronics Pub Date : 2020-05-18 , DOI: 10.1134/s1063739720030063
A. A. Tatarintsev , A. V. Shishlyannikov , K. V. Rudenko , A. E. Rogozhin , A. E. Ieshkin

Abstract

A study was made of the dependence of the contrast value of a negative electron resist based on hydrogen-silsesquioxane (HSQ) in the process of the development of NaOH–NaCl in an aqueous alkaline-salt solution at various temperatures. When the temperature of the developer rises from 22 to 40°C the contrast increases by 45%. An increase in contrast was also found with a decrease in the developing temperature by 27% to 10°C compared with the developing temperature of 22°C. Thus, a nonmonotonic change in the contrast of the HSQ resist from the temperature of the development was established. Studies of AFM images of test structures in areas where exposure to the HSQ resist was performed demonstrate the phase contrast even in regions with zero resist thickness after development, which indicates a change in the adhesive properties of the surface.


中文翻译:

温度对对比HSQ电子抗蚀剂显影的影响

摘要

在碱性温度下,在不同温度下,NaOH-NaCl的显影过程中,研究了基于氢倍半硅氧烷(HSQ)的负电子抗蚀剂的对比度值的依赖性。当显影剂的温度从22°C升高到40°C时,对比度增加了45%。与22°C的显影温度相比,显影温度降低10%至27°C,对比度也有所提高。因此,确定了HSQ抗蚀剂的对比度从显影温度的非单调变化。在暴露于HSQ抗蚀剂的区域中测试结构的AFM图像的研究表明,即使显影后抗蚀剂厚度为零的区域也具有相衬,这表明表面的粘合性能发生了变化。
更新日期:2020-05-18
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