当前位置:
X-MOL 学术
›
Russ. Microelectron.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
The Effect of Temperature on the Development of a Contrast HSQ Electronic Resist
Russian Microelectronics Pub Date : 2020-05-18 , DOI: 10.1134/s1063739720030063 A. A. Tatarintsev , A. V. Shishlyannikov , K. V. Rudenko , A. E. Rogozhin , A. E. Ieshkin
中文翻译:
温度对对比HSQ电子抗蚀剂显影的影响
更新日期:2020-05-18
Russian Microelectronics Pub Date : 2020-05-18 , DOI: 10.1134/s1063739720030063 A. A. Tatarintsev , A. V. Shishlyannikov , K. V. Rudenko , A. E. Rogozhin , A. E. Ieshkin
Abstract
A study was made of the dependence of the contrast value of a negative electron resist based on hydrogen-silsesquioxane (HSQ) in the process of the development of NaOH–NaCl in an aqueous alkaline-salt solution at various temperatures. When the temperature of the developer rises from 22 to 40°C the contrast increases by 45%. An increase in contrast was also found with a decrease in the developing temperature by 27% to 10°C compared with the developing temperature of 22°C. Thus, a nonmonotonic change in the contrast of the HSQ resist from the temperature of the development was established. Studies of AFM images of test structures in areas where exposure to the HSQ resist was performed demonstrate the phase contrast even in regions with zero resist thickness after development, which indicates a change in the adhesive properties of the surface.中文翻译:
温度对对比HSQ电子抗蚀剂显影的影响