Abstract

A circuit of a measuring chip for determining an arbitrary pure state of a charge qubit is proposed. The strength of the current flowing through a single-electron transistor in the steady-state mode depends on the state of the qubit. To enhance the sensitivity of the transistor, its working part is built from three quantum dots (QDs) with the energy levels forming a symmetric configuration. The parameters of the system are calculated using a microscopic model of two-dimensional QDs. The time dependences of the population of the structure’s states are obtained and the current strength, sensitivity, and measuring contrast as functions of the geometric parameters of the system are determined. The effect of dissipative processes related to the acoustic phonons on the measurements is investigated and the rates of electron relaxation and dephasing in a two-level system are calculated.

中文翻译：

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具有优化的隧道结构的量子芯片，用于基于双量子点的电荷量子位测量

摘要

提出了一种用于确定电荷量子位的任意纯态的测量芯片的电路。在稳态模式下流过单电子晶体管的电流强度取决于量子位的状态。为了提高晶体管的灵敏度，其工作部分由三个量子点（QD）构成，其能级形成对称配置。使用二维QD的微观模型计算系统的参数。获得了结构状态总体的时间依赖性，并确定了当前强度，灵敏度和测量对比度作为系统几何参数的函数。