Impedance spectroscopy technique was used to characterize the electrical properties in a wide range of frequency [40–10⁵ Hz] and temperature [80–700 K]. As a result, AC-conductivity spectrum follows the ‘double Jonscher Power Law’ in the temperature range [80–280 K], ‘Jonscher Power Law’ in [300–600 K] range and at 700 Kit is described by the classical Drude model. Moreover, the AC-conductivity analysis reveals the contribution of multiple mechanisms in conduction. In fact, the variation of the frequency exponent ‘s₁’ with temperature shows that the correlated barrier hopping mechanism is the dominated model for conduction of charge carriers beyond T = 470 K. The previous model was observed again according to the temperature dependence of the frequency exponent ‘s₂.’ Then, the deduced activation energy decreases with increasing frequency suggesting the availability of hopping conduction. The temperature dependence of AC-conductivity proves the existence of metal semi-conductor transition at 200 K. At high temperatures, the DC-conductivity analysis reveals that the conduction process is dominated by thermally activated hopping of small polaron. However, at low temperatures, it is confirmed that the most suitable mechanism for conduction is the Shklovskii–Efros-Variable Range Hopping process.

阻抗谱技术用于表征频率[40-10 ⁵  Hz]和温度[80-700 K]范围内的电性能。结果，交流电导率谱在[80–280 K]温度范围内遵循“双Jonscher功率定律”，在[300–600 K]温度范围内遵循“ Jonscher功率定律”，在700 Kit中由经典Drude描述。模型。此外，交流电传导性分析揭示了多种传导机制。实际上，频率指数' s ₁ '随温度的变化表明，相关的势垒跳跃机制是传导载流子超过T的主导模型。 = 470K。根据频率指数' s ₂的温度依赖性，再次观察到先前的模型。然后，推论的活化能随频率增加而降低，表明跳跃传导的可用性。交流电的温度依赖性证明了在200 K时存在金属半导体跃迁。在高温下，直流电性分析表明，导电过程主要受小极化子的热激活跳跃的影响。但是，在低温下，已确认最合适的传导机制是Shklovskii–Efros-Variable跳频过程。