Greatly secure semiconducting materials of Ag doped ZrO₂ (AZO) nanoparticles have been prepared by the use of hydrothermal and precipitation methods. Photocatalytic nanoparticles were characterized by UV-DRS, XRD, FT-IR and HR-SEM, HR-TEM, PL and CV techniques. Admirable improvement in the direct band gap of 4.61–4.58 eV was achieved as a result of doping. XRD diffraction pattern established the arrangement of monoclinic and tetragonal phase. The crystallite size and specific surface area were resoluted as 37.51 nm and 50.44 g/cm³. In addition, microscopic observation shows the Ag doped ZrO₂ has achieved agglomeration and the particle diameter range between less than 100 nm of 5.81 and 7.65 1/nm. Luminescence and cyclic voltammetry are given additional supports towards optoelectronic characterization of Ag doped zirconium dioxide nanomaterials. The obtained ZO/AZO nanoparticles persist towards cationic dye of Rh6G at outfitted parameters of pH medium 9 implemented effectively in UV and solar light. The photodegradation of Rh6G dye is well described by pseudo-first order kinetics and high quantum yield. The Langmuir–Hinshel wood mechanism of photocatalytic effect of Ag doped Zirconium oxide nanomaterial have been discussed sucessfully and COD analysis was investigated. In this study, AZO material has to be proficient and potential remediated for contaminated water.

已经通过使用水热法和沉淀法制备了高度安全的掺Ag ZrO ₂（AZO）纳米粒子的半导体材料。通过UV-DRS，XRD，FT-IR和HR-SEM，HR-TEM，PL和CV技术对光催化纳米颗粒进行了表征。由于掺杂，直接带隙为4.61–4.58 eV取得了令人称赞的改善。XRD衍射图谱确定了单斜相和四方相的排列。晶粒尺寸和比表面积确定为37.51nm和50.44g / cm ³。另外，显微镜观察表明Ag掺杂的ZrO ₂已实现团聚，且粒径范围在5.81至7.65 1 / nm的小于100 nm之间。发光和循环伏安法为Ag掺杂的二氧化锆纳米材料的光电表征提供了额外的支持。所获得的ZO / AZO纳米粒子在pH介质9的合适参数下在UV和太阳光下有效地保持向Rh6G的阳离子染料的方向。Rh6G染料的光降解通过拟一级动力学和高量子产率得到了很好的描述。成功地研究了Langmuir-Hinshel木材对Ag掺杂的氧化锆纳米材料的光催化作用的机理，并对COD分析进行了研究。在这项研究中，AZO材料必须精通并且有可能对被污染的水进行补救。